CompoundTek launches Southeast Asia’s first silicon photonics testing services hub in Singapore
on January 28, 2020 at 5:45 pm
Singapore-based silicon photonic (SiPh) foundry services provider CompoundTek Pte Ltd, has launched its maiden SiPh test facility, believed to be Southeast Asia’s first site offering production and engineering test services accessible to commercial industry players. The testing service is independent of CompoundTek’s foundry services, enabling non-CompoundTek customers the opportunity to leverage the open-testing platform...
Flisom chooses LayTec mapping inspection tool for CIGS PV module quality control
on January 28, 2020 at 1:20 pm
Flisom AG of Niederhasli, Switzerland – which was founded in 2005 as a spin-off of the Solid-State Physics of the Swiss Federal Institute of Technology Zurich (ETH Zurich) and has the Swiss Federal Laboratories for Materials Science and Technology (Empa) as a technology partner – has chosen LayTec AG of Berlin, Germany to supply an at-line mapping inspection tool for quality assurance in its copper indium gallium diselenide (Cu(In,Ga)Se2, or CIGS) thin-film production line. The metrology tool will help Flisom to maintain maximum yield in manufacturing of light-weight flexible CIGS photovoltaic modules...
Singulus receives €50m order from CNBM subsidiary for CIGS solar module production systems
on January 27, 2020 at 6:23 pm
Singulus Technologies AG of Kahl am Main, Germany (which makes production equipment for the optical disc and solar sectors) says that its customer Bengbu Design and Research Institute of Glass Industry Co Ltd, a subsidiary of Beijing-based China National Building Materials (CNBM), has placed a large order, worth €50m in the first stage of expansion, for the delivery of copper indium gallium diselenide (CIGS) solar module production systems to its site in Xuzhou...
Sheffield Quantum Centre launched to develop computing, communication, sensing and imaging technologies
on January 27, 2020 at 1:16 pm
A new research center targeting computing, communication, sensing and imaging technologies has been launched by the UK’s University of Sheffield. Officially opened by alumnus Lord Jim O’Neill (chair of Chatham House, Royal Institute of International Affairs), the Sheffield Quantum Centre is bringing together more than 70 of the university’s leading scientists and engineers to develop new quantum technologies, which it is reckoned could lead to the development of more secure communications technologies and computers that can solve problems far beyond the capabilities of existing computers. The UK government has invested in quantum research as part of a national program and has committed £1bn in funding over 10 years...
Nitride Semiconductor wins UV LED patent lawsuits in USA against RayVio
on January 27, 2020 at 1:05 pm
Nitride Semiconductor Co Ltd of Tokushima, Japan says that it has won a patent infringement lawsuit against RayVio Corp of Haywood, CA, USA, which is commercializing deep-ultraviolet (UV) LEDs and consumer disinfection solutions for health and hygiene applications...
Epitaxy equipment market to grow from $940m to over $6bn by 2025, driven by VCSEL and disruptive LED devices
on January 24, 2020 at 9:36 am
The epitaxy growth equipment market for ‘More than Moore’ devices was worth nearly $940m in 2019, and is expected to exceed $6bn by 2025 (in an aggressive scenario), according to Yole Développement’s technology & market report ‘Epitaxy Growth Equipment for More Than Moore Devices’...
Shin-Etsu licenses Qromis’ GaN substrate technology
on January 23, 2020 at 3:28 pm
Shin-Etsu Chemical Co Ltd of Tokyo, Japan has agreed to license the patented gallium nitride (GaN)-related technology of fabless firm Qromis Inc of Santa Clara, CA, USA (spun off from Micron Technology in 2015) as Shin-Etsu moves ahead with its development of GaN-related products...
Nakamura to receive National Academy of Sciences 2020 Award for Industrial Application of Science
on January 23, 2020 at 2:13 pm
Shuji Nakamura, a professor of materials and of electrical and computer engineering at University of California Santa Barbara (UCSB), has been selected to receive the National Academy of Sciences (NAS) 2020 Award for the Industrial Application of Science for “pioneering discoveries, synthesis and commercial development of gallium nitride LEDs and their use in sustainable solid-state light sources, which are reducing global greenhouse-gas emissions while also reducing costs to those adopting this technology”. Presented triennially, the award (which this year focuses on sustainability) “recognizes applications in industry of significant achievements in science”...
TDK Ventures invests in GaN laser light firm SLD Laser
on January 22, 2020 at 8:36 pm
Electronics company TDK Corp of Tokyo, Japan says that subsidiary TDK Ventures Inc has added to its growing portfolio of companies by investing in SLD Laser of Goleta, near Santa Barbara, CA, USA (a spin-off from LED lighting firm Soraa Inc of Fremont, CA that is commercializing visible laser light sources for automotive, mobility, medical, LiFi communication, sensing, specialty lighting and consumer applications)...
UMS’ GaN & GaAs PDKs for Pathwave ADS support enhanced thermal capability
on January 21, 2020 at 7:13 pm
United Monolithic Semiconductors (UMS), which designs and produces RF and millimeter-wave components and ICs at its facilities in Orsay, France and Ulm, Germany, says that the Pathwave ADS process design kit (PDK) for its 0.25µm gallium nitride (GH25) process will now support the new ElectroThermal capability (ETH) offered by Pathwave ADS (Advanced Design System) from Keysight Technologies Inc of Santa Rosa, CA, USA. This new functionality is not only included for the GH25 GaN PDK but also on the UMS PPH15X-20 gallium arsenide (GaAs) power pHEMT process PDK...
II-VI launches high-speed datacom VCSELs on 150mm GaAs for optical HDMI cables in consumer electronics
on January 21, 2020 at 5:00 pm
Engineered materials and optoelectronic component maker II-VI Inc of Saxonburg, PA, USA has introduced high-speed vertical-cavity surface-emitting lasers (VCSELs) on its vertically integrated 150mm gallium arsenide (GaAs) technology platform to serve the growing demand for optical high-definition multimedia interface (optical HDMI) cables in consumer electronics...
GaN Systems’ power transistors used in Siemens’ new low-voltage Simatic Micro-Drive product line
on January 21, 2020 at 4:54 pm
GaN Systems Inc of Ottawa, Ontario, Canada (a fabless developer of gallium nitride-based power switching semiconductors for power conversion and control applications) says that Siemens is integrating part of its Simatic Micro-Drive product line with GaN Systems’ power semiconductors...
Fraunhofer IAF reports record 640GHz InGaAs MOSHEMT transistors
on January 20, 2020 at 4:28 pm
The Fraunhofer Institute for Applied Solid State Physics (IAF) in Freiburg, Germany has developed a metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) — replacing the Schottky barrier of a conventional indium gallium arsenide (InGaAs)-channel HEMT with an isolating oxide layer (enabling smaller and more powerful devices) — that achieves a record cut-off frequency of 640GHz...
Osram launches new generation of Oslon Square Hyper Red LEDs for horticulture lighting
on January 20, 2020 at 2:02 pm
Osram Opto Semiconductors GmbH of Regensburg, Germany claims that its new generation of Oslon Square Hyper Red is the most efficient LED for horticulture lighting to date...
Lumileds appoints auto industry veteran Matt Roney to lead Automotive business unit
on January 20, 2020 at 8:28 am
Lumileds LLC of San Jose, CA, USA has recruited Matt Roney as president of its Automotive business unit, based at the firm’s Farmington Hills office...
Lancaster University shows how InAs/AlSb resonant-tunnelling non-volatile memory consumes 100 times less switching energy than DRAM
on January 17, 2020 at 10:52 am
Researchers in the Department of Physics of Lancaster University in the UK have demonstrated how their invention of a new type of memory device could transform the way computers, smartphones and other gadgets work (Dominic Lane and Manus Hayne, ‘Simulations of Ultralow-Power Nonvolatile Cells for Random-Access Memory’, IEEE Transactions on Electron Devices (2020) January issue...
LayTec EpiTT used to optimize MBE growth of InP-based quantum cascade lasers
on January 17, 2020 at 10:39 am
In their recent molecular beam epitaxy (MBE) project, researchers at the Institute of Electron Technology in Warsaw, Poland focused on optimizing the growth conditions of MBE-grown indium phosphide (InP)-based quantum cascade lasers (QCLs)...
LayTec’s EpiTT FaceT chosen by high-power laser maker for yield improvement
on January 17, 2020 at 10:39 am
In-situ metrology system maker LayTec AG of Berlin, Germany notes that it has been demonstrated for edge-emitting gallium arsenide (GaAs)-based lasers that the threshold for catastrophic optical mirror damage at the laser facets can be improved to levels higher even than the bulk damage threshold by zinc seenide (ZnSe) facet passivation in molecular beam expitaxy (MBE)...
Pasternack launches Class AB high-power amplifiers up to 200W for bands from 20MHz to 18GHz
on January 16, 2020 at 9:58 pm
Pasternack Inc of Irvine, CA, USA (an Infinite Electronics brand that makes both passive and active RF, microwave and millimeter-wave products) has launched a series of high-power Class AB broadband amplifier modules that incorporate gallium nitride (GaN), LDMOS or VDMOS semiconductor technology. The combination of high linearity and efficiency with low distortion over a wide dynamic range makes them suitable for applications including communications systems, military radio, radar, signal jamming, test & measurement and base stations, says the firm...
GaN Systems named in 2020 Global Cleantech 100 list
on January 16, 2020 at 6:50 pm
GaN Systems Inc of Ottawa, Ontario, Canada (a fabless developer of gallium nitride-based power switching semiconductors for power conversion and control applications) has been named by Cleantech Group in its 2020 Global Cleantech 100 list of companies...k
ON Semiconductor signs LiDAR collaboration MOU with SOS LAB
on January 16, 2020 at 7:50 am
On 7 January at the Consumer Electronics Show (CES 2020) in Las Vegas, ON Semiconductor of Phoenix, AZ, USA signed a collaboration memorandum of understanding (MOU) with SOS LAB of Gwangju, South Korea - a light detection & ranging (LiDAR) startup for self-driving cars - to use their respective technologies jointly to accelerate the development and commercialization of LiDAR systems focused on the automotive and smart factory markets...
Midsummer announces completion of first installation of Bender SunWave solar roof panels
on January 15, 2020 at 6:25 pm
Midsummer AB of Järfälla, near Stockholm, Sweden – a provider of turnkey production lines as well as flexible, lightweight copper indium gallium diselenide (CIGS) thin-film solar panels for building-integrated photovoltaics (BIPV) – has announced completion (at a townhouse outside Stockholm) of the first installation of Bender SunWave (solar panels fully integrated with roof tiles after a collaboration with Sweden-based roof manufacturer Benders)...
Littelfuse launches Gate Drive Evaluation Platform to speed design of SiC-based power converters
on January 15, 2020 at 5:02 pm
Littelfuse Inc of Chicago, IL, USA, which provides circuit protection technologies (including fuses, semiconductors, polymers, ceramics, relays and sensors), has launched the Gate Drive Evaluation Platform (GDEV) for evaluating silicon carbide (SiC) MOSFETs, SiC Schottky diodes and other peripheral components like gate driver circuitry, so that designers can better understand how silicon carbide technologies will behave in converter applications under continuous operating conditions...
ROHM’s SiCrystal wins $120m multi-year deal to supply 150mm silicon carbide wafers to ST
on January 15, 2020 at 2:02 pm
Single-crystal silicon carbide (SiC) wafer maker SiCrystal AG of Erlangen, Germany (a company of power semiconductor manufacturer ROHM group of Kyoto, Japan) has signed a multi-year agreement to supply more than $120m of 150mm SiC wafers to STMicroelectronics of Geneva, Switzerland during what is described as this current period of demand ramp-up for silicon carbide power devices...
Osram’s new Oslon Boost HM LED enables ultra-slim designs for headlights
on January 15, 2020 at 8:13 am
In recent years, technological progress in car lighting has led to light becoming an essential design element in modern cars. Smaller and brighter light sources are leading to more compact and versatile headlamps. Germany’s Osram says that its powerful new Oslon Boost HM LED furthers this trend by enabling ultra-slim headlamp designs in vehicles...